Ultrathin Nanowire Transistor Breakthrough

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vertical nanowire transistors

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Nanoscale transistors could enable more efficient electronics

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MIT researchers fabricated a new type of three -dimensional 3D transistors using ultrathin semiconductor materials.

Their devices can deliver performance comparable to state-of-the-art silicon transistors while operating efficiently at much lower voltages than conventional devices.

The devices leverage quantum mechanical properties to simultaneously achieve low-voltage operation and high performance within an area of just a few square nanometers.

When tested their devices, the sharpness of the switching slope was below the fundamental limit that can be achieved with conventional silicon transistors.

Their devices performed about 20 times better than similar tunneling transistors, the researchers say.

The researchers are now striving to enhance their fabrication methods to make transistors more uniform across an entire chip.

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